Vol. 1, No. 5, 2006

Download this article
Download this article For screen
For printing
Recent Issues

Volume 12
Issue 3, 249–351
Issue 2, 147–247
Issue 1, 1–146

Volume 11, 5 issues

Volume 10, 5 issues

Volume 9, 5 issues

Volume 8, 8 issues

Volume 7, 10 issues

Volume 6, 9 issues

Volume 5, 6 issues

Volume 4, 10 issues

Volume 3, 10 issues

Volume 2, 10 issues

Volume 1, 8 issues

The Journal
Editorial Board
Research Statement
Scientific Advantage
Submission Guidelines
Submission Form
Author Index
To Appear
ISSN: 1559-3959
Plane harmonic elasto-thermodiffusive waves in semiconductor materials

Jagan Nath Sharma and Naveen Thakur

Vol. 1 (2006), No. 5, 813–835

The aim of this article is to give a detailed account of the plane harmonic generalized elasto-thermodiffusive (ETNP) waves in semiconductive materials. The shear (purely transverse) waves get decoupled from the rest of the motion and remain independent of the influence of other fields. These waves propagate without dispersion and attenuation in semiconductors. The coupled system of partial differential equations, governing the rest of the interacting fields, has been solved to obtain a complex secular equation. According to the frequency equation, four coupled longitudinal waves, namely, the quasithermoelastic (QTE), quasielastodiffusive (QEN/QEP), quasithermodiffusive (QTN/QTP), and quasithermal (T-mode), can exist and propagate in an infinite semiconductor. The complex secular equation of plane harmonic waves in semiconductors is solved by using Descartes’ algorithm and the irreducible case of Cardan’s method in order to obtain phase velocities and attenuation coefficients of all possible coupled waves. The thermoelastic (ET), elastodiffusive (EN/EP) and thermodiffusive (TN/TP) waves have also been investigated as special cases. The derived theoretical results have been illustrated and verified numerically for germanium (Ge) and silicon (Si) semiconductors. The computed phase velocity and attenuation profiles have been presented graphically.

semiconductors, relaxation time, electrons and holes, waves, germanium and silicon
Received: 4 December 2005
Revised: 8 February 2006
Accepted: 17 March 2006
Published: 1 September 2006
Jagan Nath Sharma
Department of Applied Sciences
National Institute of Technology
Hamirpur 177 005
Himachal Pradesh
Naveen Thakur
Department of Applied Sciences
National Institute of Technology
Hamirpur 177 005
Himachal Pradesh