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Fracture mechanics
analysis of three-dimensional ion cut technology
Xi-Qiao Feng, Mei Xu, Xuyue Wang and Bin Gu |
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Vol. 2 (2007), No. 9, 1831–1852
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Abstract |
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The recently established ion cut technology enables accurate fabrication of silicon-on-insulator (SOI) wafers and has found some other significant applications. We study fracture mechanics of the technology when directly cutting a wafer into a desired surface morphology. First, we describe integral transform-based methods for calculating the stress intensity factors of subsurface cracks embedded in a semiinfinite solid. Because the crack and the free surface interact, the crack tip fields are generally of I-II mixed mode. We derive solutions for plane-strain or axisymmetrical configurations. We then analyze the suggested three-dimensional ion cut method using the fracture criterion for kinking propagation of a mixed-mode crack. To illustrate the approach, we consider circular hole and straight groove surface patterns. |
Keywords
crack, fracture, stress intensity factor, integral
transform method, ion cut technology
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Milestones
Received: 23 August 2006
Revised: 23 June 2007
Accepted: 3 July 2007
Published: 1 November 2007
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Authors |
| Xi-Qiao Feng | |
| Department of Engineering
Mechanics Tsinghua University Beijing 100084 China |
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| Mei Xu | |
| Department of Engineering
Mechanics Tsinghua University Beijing 100084 China |
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| Xuyue Wang | |
| Department of Sciences Harbin Institute of Technology Shenzhen Graduate School Shenzhen 518055 China |
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| Bin Gu | |
| Centre for Advanced Materials
Technology (CAMT) School of Aerospace Mechanical and Mechatronic Engineering J07 The University of Sydney NSW 2006 Australia |
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