Vol. 2, No. 9, 2007

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Fracture mechanics analysis of three-dimensional ion cut technology

Xi-Qiao Feng, Mei Xu, Xuyue Wang and Bin Gu

Vol. 2 (2007), No. 9, 1831–1852

The recently established ion cut technology enables accurate fabrication of silicon-on-insulator (SOI) wafers and has found some other significant applications. We study fracture mechanics of the technology when directly cutting a wafer into a desired surface morphology. First, we describe integral transform-based methods for calculating the stress intensity factors of subsurface cracks embedded in a semiinfinite solid. Because the crack and the free surface interact, the crack tip fields are generally of I-II mixed mode. We derive solutions for plane-strain or axisymmetrical configurations. We then analyze the suggested three-dimensional ion cut method using the fracture criterion for kinking propagation of a mixed-mode crack. To illustrate the approach, we consider circular hole and straight groove surface patterns.

crack, fracture, stress intensity factor, integral transform method, ion cut technology
Received: 23 August 2006
Revised: 23 June 2007
Accepted: 3 July 2007
Published: 1 November 2007
Xi-Qiao Feng
Department of Engineering Mechanics
Tsinghua University
Beijing 100084
Mei Xu
Department of Engineering Mechanics
Tsinghua University
Beijing 100084
Xuyue Wang
Department of Sciences
Harbin Institute of Technology
Shenzhen Graduate School
Shenzhen 518055
Bin Gu
Centre for Advanced Materials Technology (CAMT)
School of Aerospace
Mechanical and Mechatronic Engineering J07
The University of Sydney
NSW 2006