The paper reviews recent research and developments on simulated indentation tests
at micron and nanometer levels. For indentation at the maximum depth of several
microns or hundreds of nanometer, classical continuum plasticity framework
incorporating Taylor dislocation model via strain gradient plasticity embedded in the
constitutive equation may be adopted to take care of the size effect. As higher-order
stress components and higher-order continuity requirements can be made redundant,
only
finite elements incorporating strain gradient plasticity have to be formulated. This
results in the significant ease and convenience in finite element implementation
requiring minimal additional computational effort and resources. Alternatively, when
the indentation depth is lower at nanometer level, either a large scale molecular
dynamics model or a hybrid finite element and molecular dynamics simulation has to
be adopted. The article includes certain results from the former approach on
nanoindentation based on combination of both Morse potential and embedded-atom
model potential.
