While improving graphene production techniques seems to be critical for the
successful development of practical graphene-based devices, another technological
bottleneck stems from the fact that not all mechanisms controlling the coupled
thermal-mechanical-electrical behavior of graphene-based materials are fully known
at present. In this work, we specifically aim to propose a methodology to investigate
the behavior of controlled distributions of point defects in graphene. We present a
bondwise force-constant model derived from the adaptive intermolecular reactive
empirical bond-order (AIREBO) potential and compare the force-constant values
with those obtained from other interatomic potentials. In addition, we present a
particular computational scheme that, while preserving the advantages of discrete
dislocation theory, allows the assessment of the stability of discrete defects. In
particular, we study two dislocation dipole configurations: glide and shuffle.