Vol. 13, No. 1, 2018

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ISSN: 1559-3959
Electromechanical fields in a nonuniform piezoelectric semiconductor rod

Guangying Yang, Jianke Du, Ji Wang and Jiashi Yang

Vol. 13 (2018), No. 1, 103–120
DOI: 10.2140/jomms.2018.13.103
Abstract

We study electromechanical fields in a piezoelectric semiconductor rod nonuniformly doped with impurities producing holes and electrons. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used, which was reduced to a one-dimensional model for thin rods in a previous paper. In this paper the one-dimensional theory is linearized for low electric potential or voltage. Solutions from the linearized one-dimensional equations are obtained for three specific doping profiles: linear doping, piecewise linear doping with fundamentally important applications in PN junctions, and sinusoidal doping. Various electromechanical fields produced by the doping are calculated and examined. The results are fundamental to piezoelectric semiconductor devices or piezotronics.

Keywords
piezoelectric, semiconductor, piezotronics
Milestones
Received: 2 September 2017
Revised: 24 September 2017
Accepted: 29 September 2017
Published: 7 April 2018
Authors
Guangying Yang
Mechanical Engineering and Mechanics
Ningbo University
Ningbo
China
Jianke Du
Mechanical Engineering and Mechanics
Ningbo University
Ningbo
China
Ji Wang
Mechanical Engineering and Mechanics
Ningbo University
Ningbo
China
Jiashi Yang
Mechanical and Materials Engineering
University of Nebraska – Lincoln
NE
United States