The research on the electromigration behavior of inclusions has a significant impact
on extending the lifespan of interconnects and tuning the required nanopatterns or
nanostructures. The electromigration behavior of conductive inclusions in highly
symmetric oriented single crystal metal interconnects is studied in this paper utilizing
phase-field simulation combined with adaptive mesh technology and the
finite element method. Facet-central-cubic metal allows us to investigate
the effects of misorientation and anisotropic strength on the morphological
evolution of inclusions under highly symmetric orientation. Meanwhile, the
relationship between the above two parameters is explored by establishing the
morphological evolution maps. The results indicate that three main evolution
patterns and their combination patterns emerge during the electromigration
process: steady migration, complex splitting, oscillation, splitting before
steady migration and splitting before oscillating. Furthermore, the velocity
of a steady migration of inclusions, the frequency of oscillation, and the
number of splitting generation inclusions decrease as anisotropic strength
increases.
