Kishor R. Gaikwad, Rakhi Tiwari, Vivek Tripathi, Abhinav
Singhal, Om Namha Shivay, Ahmed Abouelregal and Yazeed
Alhassan
Vol. 21 (2026), No. 1, 49–69
DOI: 10.2140/jomms.2026.21.49
Abstract
We investigate a novel meticulous heat transfer model to capture the
photo-thermal-elastic interactions efficiently inside a nonlocalized semiconductor
material affected from a dynamic thermal loading. For the purpose of apprehending
memory and nonlocal effects during complex diffusion processes inside the
semiconductor, the Atangana–Baleanu
fractional derivative is
established on the linearized coupled thermoelastic theory which involves thermal
displacement gradient and temperature gradient among the constitutive variables.
Laplace transform methodology is acquired for solving the problem. Later on, a
suitable algorithm of numerical inversion of the Laplace transform is employed for
achieving the computational results in physical domain. As per the graphical results,
conclusions about the influences of significant parameters such as fractional
parameter, photo-generated carrier life-span and the velocity of dynamic heat source
on the dimensionless physical fields like temperature, displacement, stress and carrier
density are constructed. Further, the utility of the current advanced heat transfer
model is established by comparing the graphical results of physical fields under
the current heat transfer theory with the old developed theories of heat
transfer models having two phase lags and single phase lag parameter. All
the graphical results are evaluated against distinct values of depth of the
semiconductor media. We believe that this fine study will support researchers for
obtaining
promising and optimum results of real world problems where the photo-thermal
effects inside the semiconductor are taken into account.
Keywords
photo-thermoelasticity, AB fractional derivative, nonlocal,
semiconductors, delay times